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| DC COMPONENTS CO., LTD. R DMBT2369 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high speed switching applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 40 40 4.5 500 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCES BVCEO BVEBO ICBO VCE(sat) VBE(sat) hFE1 hFE2 Cob 380s, Duty Cycle (1) Min 40 40 15 4.5 700 40 20 2% Typ - Max 400 250 850 120 4 Unit V V V V nA mV mV pF Test Conditions IC=10A, IE=0 IC=10A, IB=0 IC=10mA, IB=0 IE=10A, IC=0 VCB=20V, IE=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10mA, VCE=1V IC=100mA, VCE=2V VCB=5V, f=1MHz, IE=0 Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width |
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